Impact of next-nearest-neighbor hopping on ferromagnetism in diluted magnetic semiconductors
نویسندگان
چکیده
منابع مشابه
Theory of Ferromagnetism in Diluted Magnetic Semiconductors
Carrier-induced ferromagnetism has been observed in several (III,Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn spins and valence-band carriers. We discuss the applicability of this model, the validity of a mean-field approximation for its interaction term widely used in t...
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We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the...
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Results of Monte Carlo simulations for the spinless Falicov–Kimball model with the next-nearest-neighbor hopping are presented. We find the critical value of the next-nearest-neighbor hopping integral, below which the low temperature configuration of the localized particles is the same as in the presence of only the nearest-neighbor hopping. Beyond this critical value the localized particles fo...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.102.245112